copyright@ semipower electronic technology co., ltd. all rights reserved. july. 2013. rev. 3.0 1 /5 features high ruggedness r ds( on ) (max 0.55 ? )@v gs =10v gate charge (typical 38 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. n - channel to - 220 mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 400 v i d continuous drain current (@t c =25 o c) 10* a continuous drain current (@t c =100 o c) 6.3* a i dm drain current pulsed (note 1) 40 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 1200 mj e ar repetitive avalanche energy (note 1) 170 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 226 w derating factor above 25 o c 1.8 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 0.55 o c/w r thcs thermal resistance, case to sink 0.5 o c/w r thja thermal resistance, junction to ambient 58 o c /w bv dss : 400v i d : 10a r ds(on) : 0.55ohm 1 2 3 1. gate 2. drain 3. source 1 2 3 to - 220 sw740 u samwin item sales type marking package packaging 1 sw p 740u sw740 to - 220 tube order codes
copyright@ semipower electronic technology co., ltd. all rights reserved. july. 2013. rev. 3.0 2 /5 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 400 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.43 v/ o c i dss drain to source leakage current v ds =400v, v gs =0v 1 ua v ds =320v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 5a 0.35 0.55 ? g fs forward transconductance v ds = 20v , i d =5 a 10 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 1150 pf c oss output capacitance 170 c rss reverse transfer capacitance 40 t d(on) turn on delay time v ds =200v, i d =10a, r g =25 ? (note 4,5) 15 30 ns tr rising time 35 60 t d(off) turn off delay time 98 200 t f fall time 38 80 q g total gate charge v ds =320v, v gs =10v, i d =10a (note 4,5) 38 70 nc q gs gate - source charge 6 q gd gate - drain charge 18 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 10 a i sm pulsed source current 40 a v sd diode forward voltage drop. i s =10a, v gs =0v 1.5 v t rr reverse recovery time i s =10a, v gs =0v, di f /dt=100a/us 270 ns q rr reverse recovery charge 2.53 uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 25.4mh, i as = 10a, v dd = 50v, r g =25 ?, starting t j = 25 o c 3. i sd 10a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. sw740 u samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. july. 2013. rev. 3.0 3 /5 fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics fig. 6. on resistance variation vs. junction temperature fig 5. breakdown voltage variation vs. junction temperature fig. 4. on state current vs. diode forward voltage sw740 u samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. july. 2013. rev. 3.0 4 /5 fig. 7. maximum safe operating area fig. 8. transient thermal response curve sw740 u samwin v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9. gate charge test circuit & waveform fig. 10. switching time test circuit & waveform v ds same type as dut dut v gs 2ma q g q gs q gd v gs charge nc 10v
copyright@ semipower electronic technology co., ltd. all rights reserved. july. 2013. rev. 3.0 5 /5 fig. 11. unclamped inductive switching test circuit & waveform sw740 u samwin fig. 12. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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